Off-lattice Kinetic Monte Carlo Simulations of Strained Heteroepitaxial Growth
From MaRDI portal
Publication:3369332
DOI10.1007/3-7643-7343-1_4zbMATH Open1082.82519arXivcond-mat/0405641OpenAlexW1640629898MaRDI QIDQ3369332FDOQ3369332
Authors: F. Much, Christian Vey, Michael Biehl 
Publication date: 13 February 2006
Published in: Multiscale Modeling in Epitaxial Growth (Search for Journal in Brave)
Abstract: An off-lattice, continuous space Kinetic Monte Carlo (KMC) algorithm is discussed and applied in the investigation of strained heteroepitaxial crystal growth. As a starting point, we study a simplifying (1+1)-dimensional situation with inter-atomic interactions given by simple pair-potentials. The model exhibits the appearance of strain-induced misfit dislocations at a characteristic film thickness. In our simulations we observe a power law dependence of this critical thickness on the lattice misfit, which is in agreement with experimental results for semiconductor compounds. We furthermore investigate the emergence of strain induced multilayer islands or "Dots" upon an adsorbate wetting layer in the so-called Stranski-Krastanov (SK) growth mode. At a characteristic kinetic film thickness, a transition from monolayer to multilayer islands occurs. We discuss the microscopic causes of the SK-transition and its dependence on the model parameters, i.e. lattice misfit, growth rate, and substrate temperature.
Full work available at URL: https://arxiv.org/abs/cond-mat/0405641
Recommendations
- Kinetic Monte Carlo simulation of strained heteroepitaxial growth with intermixing
- Computation of strained epitaxial growth in three dimensions by kinetic Monte Carlo
- Fast kinetic Monte Carlo simulation of strained heteroepitaxy in three dimensions
- Lattice Gas Models and Kinetic Monte Carlo Simulations of Epitaxial Growth
- An energy localization principle and its application to fast kinetic Monte Carlo simulation of heteroepitaxial growth
- Coupling kinetic Monte-Carlo and continuum models with application to epitaxial growth
- Multiscale diffusion Monte Carlo simulation of epitaxial growth
- Analysis of an energy localization approximation applied to three-dimensional kinetic Monte Carlo simulations of heteroepitaxial growth
Parametric inference under constraints (62F30) Interacting particle systems in time-dependent statistical mechanics (82C22)
Cited In (10)
- Kinetic Monte Carlo simulation of strained heteroepitaxial growth with intermixing
- Multiscale diffusion Monte Carlo simulation of epitaxial growth
- Approximating off-lattice kinetic Monte Carlo
- A kinetic Monte Carlo method on super-lattices for the study of the defect formation in the growth of close packed structures
- Fast kinetic Monte Carlo simulation of strained heteroepitaxy in three dimensions
- Lattice Gas Models and Kinetic Monte Carlo Simulations of Epitaxial Growth
- Inverted list kinetic Monte Carlo with rejection applied to directed self-assembly of epitaxial growth
- Quasicontinuum Monte Carlo Simulation of Multilayer Surface Growth
- Coupling kinetic Monte-Carlo and continuum models with application to epitaxial growth
- Computation of strained epitaxial growth in three dimensions by kinetic Monte Carlo
This page was built for publication: Off-lattice Kinetic Monte Carlo Simulations of Strained Heteroepitaxial Growth
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q3369332)
