EFFICIENT SIMULATION OF 3‐D STRESS DISTRIBUTIONS AT TRENCH STRUCTURES CAUSED BY THERMAL MISMATCH OF TRENCH FILLING AND SILICON SUBSTRATE

DOI10.1108/EB051901MaRDI QIDQ4835974zbMATH OpenOpenAlexFDO

Authors R. Slehobr, G. Hobler

Publication date 5 July 1995

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/eb051901

zbMATH Keywords

analytical solutionrectangular parallelepipedic trench

Mathematics Subject Classification ID

Composite and mixture properties (74E30) Linear elasticity with initial stresses (74B10)

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Cites work

• scientific article; zbMATH DE number 3420323 (Why is no real title available?)
• Nuclei of Strain in the Semi-Infinite Solid
• Thermoelastic Stress in the Semi-Infinite Solid

Cited in

(3)

• Mathematical model for simulation of indium segregation and mismatch stress in InGaAs/GaAs multiple QWs heterostructures
• 3-D finite element simulation of wafer thermal distortion and stress fields in exposure process
• 3D stress simulations of nano transistors

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