EFFICIENT SIMULATION OF 3‐D STRESS DISTRIBUTIONS AT TRENCH STRUCTURES CAUSED BY THERMAL MISMATCH OF TRENCH FILLING AND SILICON SUBSTRATE

DOI10.1108/EB051901zbMATH Open0823.73078OpenAlexW2039257658MaRDI QIDQ4835974FDOQ4835974

Authors: R. Slehobr, G. Hobler 

Publication date: 5 July 1995

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb051901

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zbMATH Keywords

analytical solutionrectangular parallelepipedic trench

Mathematics Subject Classification ID

Composite and mixture properties (74E30) Linear elasticity with initial stresses (74B10)

Cites Work

• Title not available (Why is that?)
• Nuclei of Strain in the Semi-Infinite Solid
• Thermoelastic Stress in the Semi-Infinite Solid

Cited In (3)

• Mathematical model for simulation of indium segregation and mismatch stress in InGaAs/GaAs multiple QWs heterostructures
• 3-D finite element simulation of wafer thermal distortion and stress fields in exposure process
• 3D stress simulations of nano transistors

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