Features of the formation of silicon nanocrystals upon the annealing of SiO₂ layers implanted with Si ions

DOI10.3103/S106287381105039XMaRDI QIDQ693973zbMATH OpenOpenAlexFDO

Authors N. N. Ovsyuk, Venu Mankad, Sanjeev K. Gupta, Prafulla K. Jha, G. A. Kachurin

Publication date 11 December 2012

Published in Bulletin of the Russian Academy of Sciences: Physics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.3103/s106287381105039x

Mathematics Subject Classification ID

Statistical mechanics of crystals (82D25) Statistical mechanics of nanostructures and nanoparticles (82D80)

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