A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structures
DOI10.1016/J.CPC.2005.03.069zbMATH Open1196.81067OpenAlexW2070561583MaRDI QIDQ709767FDOQ709767
Authors: Yiming Li, Shao-Ming Yu 
Publication date: 18 October 2010
Published in: Computer Physics Communications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.cpc.2005.03.069
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Cites Work
- A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
- Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models
- Iteration methods for calculating self-consistent fields in semiconductor inversion layers
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- Convergence and instability of iterative procedures on the one-dimensional Schrödinger-Poisson problem
- Simulation of Si n-MOS inversion layer with Schrödinger-Poisson equivalent circuit model
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