Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile
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Cites work
- scientific article; zbMATH DE number 108361 (Why is no real title available?)
- scientific article; zbMATH DE number 736454 (Why is no real title available?)
- An Initial Value Problem from Semiconductor Device Theory
- Analysis on the initial-boundary value problem of a full bipolar hydrodynamic model for semiconductors
- Asymptotic behavior of solutions of transport equations for semiconductor devices
- Asymptotic behavior of solutions to Euler-Poisson equations for bipolar hydrodynamic model of semiconductors
- Asymptotic behavior of solutions to the bipolar hydrodynamic model of semiconductors in bounded domain
- Asymptotic behaviour of solutions of the hydrodynamic model of semiconductors
- Asymptotic convergence to stationary waves for unipolar hydrodynamic model of semiconductors
- Asymptotic stability and semi-classical limit for bipolar quantum hydrodynamic model
- Asymptotic stability of a stationary solution to a hydrodynamic model of semiconductors
- Asymptotic stability of a stationary solution to a thermal hydrodynamic model for semiconductors
- Convergence of Viscosity Solutions for Isothermal Gas Dynamics
- Existence and uniqueness of stationary solutions to a one-dimensional bipolar hydrodynamic model of semiconductors
- Global well-posedness of the hydrodynamic model for two-carrier plasmas
- Large Time Behavior of Solutions ton-Dimensional Bipolar Hydrodynamic Models for Semiconductors
- Large Time Behavior of the Solutions to a Hydrodynamic Model for Semiconductors
- Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors.
- On a hierarchy of macroscopic models for semiconductors
- On a one-dimensional steady-state hydrodynamic model for semiconductors
- On the basic equations for carrier transport in semiconductors
- Quasi-hydrodynamic semiconductor equations
- Relaxation limit and initial layer to hydrodynamic models for semiconductors
- Relaxation-Time Limit in the Isothermal Hydrodynamic Model for Semiconductors
- Relaxation-time limits of non-isentropic hydrodynamic models for semiconductors
- Stability of semiconductor states with insulating and contact boundary conditions
- Stability of the stationary solution of the Cauchy problem to a semiconductor full hydrodynamic model with recombination-generation rate
- Theory of the flow of electrons and holes in Germanium and other semiconductors
- Weak solutions to isothermal hydrodynamic model for semiconductor devices
Cited in
(4)- Large time behavior of a bipolar hydrodynamic model with large data and vacuum
- The well-posedness of bipolar semiconductor hydrodynamic model with recombination-generation rate on the bounded interval
- The relaxation limits to the bipolar hydrodynamic model for semiconductors
- Global Zero-Relaxation Limit for a Two-Fluid Euler–Poisson System
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