Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile
DOI10.1016/J.JMAA.2016.11.043zbMATH Open1358.35193OpenAlexW2555773960MaRDI QIDQ730221FDOQ730221
Haifeng Hu, Kaijun Zhang, Ming Mei
Publication date: 23 December 2016
Published in: Journal of Mathematical Analysis and Applications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jmaa.2016.11.043
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energy estimatesbipolar hydrodynamic modelrelaxation limitoperator methodbipolar drift-diffusion modelnon-constant doping profile
A priori estimates in context of PDEs (35B45) PDEs in connection with fluid mechanics (35Q35) PDEs in connection with statistical mechanics (35Q82) Statistical mechanics of semiconductors (82D37)
Cites Work
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- Weak solutions to isothermal hydrodynamic model for semiconductor devices
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- Stability of the stationary solution of the Cauchy problem to a semiconductor full hydrodynamic model with recombination-generation rate
Cited In (4)
- Large time behavior of a bipolar hydrodynamic model with large data and vacuum
- The well-posedness of bipolar semiconductor hydrodynamic model with recombination-generation rate on the bounded interval
- The relaxation limits to the bipolar hydrodynamic model for semiconductors
- Global Zero-Relaxation Limit for a Two-Fluid Euler–Poisson System
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