Reconstruction of Semiconductor Doping Profile from Laser-Beam-Induced Current Image

DOI10.1137/S0036139992234804MaRDI QIDQ4310866zbMATH OpenFDO

Authors W. Fang, Kazufumi Ito

Publication date 5 March 1995

Published in SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1137/S0036139992234804

zbMATH Keywords

algorithmlaser-beam-induced currentleast squares formulationreconstruction of a semiconductor doping profile

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Inverse problems for PDEs (35R30)

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(9)

• A homogenization model for laser beam-induced current imaging and detection of non-uniform\-ities in semiconductor arrays
• The use of silicon doped with gold for determining the shape of optical signal
• Explicit solutions for LBIC signals in semiconductors by asymptotic method
• scientific article; zbMATH DE number 869730 (Why is no real title available?)
• Risk-averse optimal control of semilinear elliptic PDEs
• The quasi-neutral limit in optimal semiconductor design
• Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
• Reconstruction of the doping profile in Vlasov-Poisson system
• Second-order approach to optimal semiconductor design

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