Inverse doping problems for a P-N junction

DOI10.1163/156939406778474541MaRDI QIDQ3410885zbMATH OpenOpenAlexFDO

Authors Isabella Torcicollo, Giuseppe Alì, Sergio Vessella

Publication date 16 November 2006

Full work available at URL https://doi.org/10.1163/156939406778474541

zbMATH Keywords

doping profile identificationdrift-diffusion equationsemiconductorsemiconductor devices

Mathematics Subject Classification ID

Initial-boundary value problems for second-order parabolic equations (35K20) Inverse problems for PDEs (35R30) Statistical mechanics of semiconductors (82D37)

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• An inverse problem of charge-collection microscopy
• Reconstruction of Semiconductor Doping Profile from Laser-Beam-Induced Current Image
• Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
• On inverse doping profile problems for the stationary voltage–current map
• Inverse problem of recovering the electron diffusion coefficient
• Reconstruction of the doping profile in Vlasov-Poisson system
• On the inverse doping profile problem
• Adjoint-Based Bayesian Uncertainty Quantification for PDE-Constrained Inverse Problems with Application to Semiconductor Imaging

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