Identification of doping profiles in semiconductor devices

Recommendations

Inverse doping problems for semiconductor devices
On identification of doping profile in semiconductors
Inverse doping problems for a P-N junction
On inverse doping profile problems for the stationary voltage–current map
On inverse problems for semiconductor equations

Cited in

(31)

On/off-state design of semiconductor doping profiles
Identification of contact regions in semiconductor transistors by level-set methods
Shape identification for natural convection problems using the adjoint variable method
Modeling and simulation of the lateral photovoltage scanning method
A complete analysis of a classical Poisson-Nernst-Planck model for ionic flow
One-dimensional steady-state Poisson-Nernst-Planck systems for ion channels with multiple ion species
Semiconductors and Dirichlet-to-Neumann maps
Inverse doping problems for semiconductor devices
On the recovery of the doping profile in an time-dependent drift-diffusion model
Parameter Identification for Semiconductor Diodes by LBIC Imaging
Inverse doping problems for a P-N junction
Capacitive model for integrated PN varactors of cells with \(N^{+}\) buried layer
On identification of doping profile in semiconductors
scientific article; zbMATH DE number 3982475 (Why is no real title available?)
Single dopant diffusion in semiconductor technology
AN OPTIMAL CONTROL APPROACH TO SEMICONDUCTOR DESIGN
scientific article; zbMATH DE number 7612044 (Why is no real title available?)
Risk-averse optimal control of semilinear elliptic PDEs
Reversal permanent charge and concentrations in ionic flows via Poisson-Nernst-Planck models
Inverse problems for semiconductors: models and methods
Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
Suppressing instability in a Vlasov-Poisson system by an external electric field through constrained optimization
Local well-posedness of 1D degenerate drift diffusion equation
Local well-posedness of drift-diffusion equation with degeneracy
Reconstruction of the doping profile in Vlasov-Poisson system
On the inverse doping profile problem
Bayesian inversion for the identification of the doping profile in unipolar semiconductor devices
Adjoint-Based Bayesian Uncertainty Quantification for PDE-Constrained Inverse Problems with Application to Semiconductor Imaging
On inverse problems for semiconductor equations
On steepest-descent-Kaczmarz methods for regularizing systems of nonlinear ill-posed equations
Second-order approach to optimal semiconductor design

This page was built for publication: Identification of doping profiles in semiconductor devices

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q2774142)