Cited in
(10)- Research on parallel finite element methods for the drift-diffusion model in semiconductor device simulations
- The 3D transient semiconductor equations with gradient-dependent and interfacial recombination
- Entropy and convergence analysis for two finite volume schemes for a Nernst-Planck-Poisson system with ion volume constraints
- WIAS-TeSCA
- Fermi-Dirac
- PHG
- ddfermi
- DevSim
- A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs
- Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient
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