The following pages link to (Q3268203):
Displaying 12 items.
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions (Q615977) (← links)
- Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile (Q960886) (← links)
- Hot Brownian carriers in the Langevin picture: application to a simple model for the gunn effect in gaas (Q1782464) (← links)
- Quasi-neutral limit and the initial layer problem of the drift-diffusion model (Q2151507) (← links)
- A mathematical model of optical bistability and the multiplicity of its solutions (Q2423584) (← links)
- The chemical potential (Q2494491) (← links)
- Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices (Q2496733) (← links)
- ELECTRICAL EXPRESSION OF SPIN ACCUMULATION IN FERROMAGNET/SEMICONDUCTOR STRUCTURES (Q3507632) (← links)
- Conservative Finite-Difference Scheme and Two-Stage Iteration Process of its Realization for the 2D Problem of Semiconductor Plasma Generation by Femtosecond Pulse (Q5159759) (← links)
- Eventual Self-similarity of Solutions for the Diffusion Equation with Nonlinear Absorption and a Point Source (Q5500579) (← links)
- Multi-Stages Iterative Process for Conservative Economic Finite-Difference Schemes Realization for the Problem of Nonlinear Laser Pulse Interaction with a Medium (Q6132591) (← links)
- Cross‐impact of beam local wavenumbers on the efficiency of self‐adaptive artificial boundary conditions for two‐dimensional nonlinear Schrödinger equation (Q6183122) (← links)