Study and simulation of the sputtering process of material layers in plasma

DOI10.1515/MCMA-2016-0106MaRDI QIDQ293514zbMATH OpenOpenAlexFDO

Authors Abdelkader Bouazza, Abderrahmane Settaouti

Publication date 9 June 2016

Published in Monte Carlo Methods and Applications (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1515/mcma-2016-0106

zbMATH Keywords

Monte Carlo simulationsenergy distributionangular distributionsputtering processsputtering yield

Mathematics Subject Classification ID

Physics (00A79) Statistical mechanics of plasmas (82D10) Statistical mechanics of metals (82D35) Relationships between surfaces, higher-dimensional varieties, and physics (14J81)

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Cites work

• NUMERICAL SIMULATION OF THE FORMATION AND PROPAGATION OF STREAMER

Cited in

(6)

• THE FORMULAS FOR THE SECONDARY ELECTRON YIELD AT HIGH INCIDENT ELECTRON ENERGY FROM GOLD AND ALUMINUM
• Understanding the contribution of energy and angular distribution in the morphology of thin films using Monte Carlo simulation
• 3D sputtering simulations of the CZTS, Si and CIGS thin films using Monte-Carlo method
• Applying invariant embedding methods to the theory of thin film sputtering by light-ion bombardment
• The probability scheme of constructing the mathematical model of shadowed sputtering
• Modeling reactive magnetron sputtering: a survey of different modeling approaches

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Uses Software

• SRIM

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