Computation for electromigration in interconnects of microelectronic devices

DOI10.1006/jcph.2000.6677zbMath1116.78341MaRDI QIDQ5937908

Amir Z. Averbuch, Moshe Israeli, Irad Yavneh, Igor Ravve

Publication date: 18 July 2001

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1006/jcph.2000.6677

Mathematics Subject Classification ID

78M20: Finite difference methods applied to problems in optics and electromagnetic theory

Related Items

Numerical simulation of grain-boundary grooving by level set method, A fitted finite element method for the numerical approximation of void electro-stress migration, The level-set method applied to droplet dynamics in the presence of an electric field, Surface evolution in bare bamboo-type metal lines under diffusion and electric field effects, A numerical model of stress driven grain boundary diffusion., Electromigration of intergranular voids in metal films for microelectronic interconnects., An unfitted finite element method for the numerical approximation of void electromigration

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