GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL

DOI10.1142/S0218202508002735zbMath1157.35013OpenAlexW1987610752MaRDI QIDQ3521666

Songmu Zheng, Wu Hao, Peter Alexander Markowich

Publication date: 26 August 2008

Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0218202508002735

zbMATH Keywords

weak solutionunique equilibriumelliptic-parabolic system3D whole-space caserecombination-generation rate

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Nonlinear boundary value problems for linear elliptic equations (35J65) A priori estimates in context of PDEs (35B45) Statistical mechanics of semiconductors (82D37)

Related Items (12)

On uniform decay of the entropy for reaction-diffusion systems ⋮ Well-posedness on a new hydrodynamic model of the fluid with the dilute charged particles ⋮ Uniform convergence to equilibrium for a family of drift-diffusion models with trap-assisted recombination and the limiting Shockley-Read-Hall model ⋮ Uniform-in-time bounds for approximate solutions of the drift-diffusion system ⋮ Existence, Decay Time and Light Yield for a Reaction-Diffusion-Drift Equation in the Continuum Physics of Scintillators ⋮ The entropy dissipation method for spatially inhomogeneous reaction–diffusion-type systems ⋮ Optimal decay rates of the solution for generalized Poisson-Nernst-Planck-Navier-Stokes equations in \(\mathbb{R}^3\) ⋮ On the entropy method and exponential convergence to equilibrium for a recombination-drift-diffusion system with self-consistent potential ⋮ The 3D transient semiconductor equations with gradient-dependent and interfacial recombination ⋮ A Generalized Poisson--Nernst--Planck--Navier--Stokes Model on the Fluid with the Crowded Charged Particles: Derivation and Its Well-Posedness ⋮ Analysis of electronic models for solar cells including energy resolved defect densities ⋮ Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case

Cites Work

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• ON CONVEX SOBOLEV INEQUALITIES AND THE RATE OF CONVERGENCE TO EQUILIBRIUM FOR FOKKER-PLANCK TYPE EQUATIONS
• On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
• STATIONARY STATES IN PLASMA PHYSICS: MAXWELLIAN SOLUTIONS OF THE VLASOV-POISSON SYSTEM
• Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
• QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
• Asymptotic behavior of the drift-diffusion semiconductor equations
• On singular limits of mean-field equations.
• Entropy dissipation methods for degenerate parabolic problems and generalized Sobolev inequalities

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