An Asymptotic Analysis of a Transient p-n-Junction Model

DOI10.1137/0147042zbMath0657.35007OpenAlexW1977599852MaRDI QIDQ3805101

Christian Ringhofer

Publication date: 1987

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/0147042

zbMATH Keywords

asymptotic expansionsasymptotic analysistransient behaviorsingularly perturbedmixed system of parabolic and elliptic equationsp-n-junction device

Mathematics Subject Classification ID

Singular perturbations in context of PDEs (35B25) Asymptotic expansions of solutions to PDEs (35C20) Initial value problems for nonlinear higher-order PDEs (35G25) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Partial differential equations of mixed type and mixed-type systems of partial differential equations (35M99)

Related Items (10)

ASYMPTOTIC METHODS FOR TRANSIENT SEMICONDUCTOR DEVICE EQUATIONS ⋮ Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case ⋮ Initial time layer problem for quantum drift-diffusion model ⋮ The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions ⋮ Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices ⋮ QUASI-NEUTRAL LIMIT OF THE MULTIDIMENSIONAL DRIFT-DIFFUSION MODELS FOR SEMICONDUCTORS ⋮ Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation ⋮ Initial transients of solutions of the semiconductor device equations ⋮ QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS ⋮ Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors

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