scientific article; zbMATH DE number 108274

zbMATH Open0797.35086MaRDI QIDQ4023732FDOQ4023732

Authors: W. Merz 

Publication date: 23 January 1993

Title of this publication is not available (Why is that?)

Recommendations

• The oxidation process of silicon: Modelling and mathematical treatment
• Construction of an Asymptotic Model for the Oxidation Process of Silicon
• On modelling thermal oxidation of Silicon II: numerical aspects
• scientific article; zbMATH DE number 497422
• scientific article; zbMATH DE number 1531806

zbMATH Keywords

existenceuniquenesstriangular elementsnumerical treatmentthermal oxidation of silicon

Mathematics Subject Classification ID

Reaction-diffusion equations (35K57) Numerical methods for partial differential equations, initial value and time-dependent initial-boundary value problems (65M99) Numerical methods for partial differential equations, boundary value problems (65N99)

Cited In (8)

• Construction of an Asymptotic Model for the Oxidation Process of Silicon
• On modelling thermal oxidation of Silicon II: numerical aspects
• A modified Deal-Grove thermal oxidation model for silicon wafers
• Recent advances in models for thermal oxidation of silicon
• The oxidation process of silicon: Modelling and mathematical treatment
• Title not available (Why is that?)
• Oxidation-induced stresses in the isolation oxidation of silicon
• Free boundary problem for a viscous compressible flow associated with oxidation of silicon

This page was built for publication:

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4023732)