A modified Deal-Grove thermal oxidation model for silicon wafers
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Publication:5437757
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Cited in
(5)- On modelling thermal oxidation of Silicon II: numerical aspects
- Recent advances in models for thermal oxidation of silicon
- Note on a simplified nonlinear model describing lasers induced oxide layer growth
- scientific article; zbMATH DE number 2021806 (Why is no real title available?)
- Construction of an Asymptotic Model for the Oxidation Process of Silicon
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