A modified Deal-Grove thermal oxidation model for silicon wafers

zbMATH Open1131.80300MaRDI QIDQ5437757FDOQ5437757

St. Iovan, Robert Szabo, Stefan Balint, László Nánai, Agneta M. Balint

Publication date: 28 January 2008

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zbMATH Keywords

crystallographic orientationgrowth mechanismDeal-Grove differential equationsilicon oxidthermal oxidation model

Mathematics Subject Classification ID

Chemically reacting flows (80A32)

Cited In (5)

• Construction of an Asymptotic Model for the Oxidation Process of Silicon
• On modelling thermal oxidation of Silicon II: numerical aspects
• Recent advances in models for thermal oxidation of silicon
• Note on a simplified nonlinear model describing lasers induced oxide layer growth
• Title not available (Why is that?)

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