Upwind finite volume scheme for semiconductor device in three dimensions

zbMATH Open1105.82310MaRDI QIDQ5487674FDOQ5487674

Authors: Qing Yang 

Publication date: 11 September 2006

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zbMATH Keywords

error estimatefinite volume methodinitial boundary value problemupwind scheme

Mathematics Subject Classification ID

Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Statistical mechanics of semiconductors (82D37)

Cited In (8)

• An upwind-block-centered finite difference method for a semiconductor device of heat conduction and its numerical analysis
• Title not available (Why is that?)
• Modified upwind finite volume scheme for semiconductor device
• A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh
• Upwind finite volume element methods for one-dimensional semiconductor device
• Mixed covolume-upwind finite volume methods for semiconductor device
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• Numerical method of mixed finite volume-modified upwind fractional step difference for three-dimensional semiconductor device transient behavior problems

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