Upwind finite volume scheme for semiconductor device in three dimensions

MaRDI QIDQ5487674zbMATH OpenFDO

Authors Qing Yang

Publication date 11 September 2006

zbMATH Keywords

error estimatefinite volume methodinitial boundary value problemupwind scheme

Mathematics Subject Classification ID

Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Statistical mechanics of semiconductors (82D37)

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(8)

• Modified upwind finite volume scheme for semiconductor device
• Numerical method of mixed finite volume-modified upwind fractional step difference for three-dimensional semiconductor device transient behavior problems
• A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh
• An upwind-block-centered finite difference method for a semiconductor device of heat conduction and its numerical analysis
• Upwind finite volume element methods for one-dimensional semiconductor device
• scientific article; zbMATH DE number 4182772 (Why is no real title available?)
• Mixed covolume-upwind finite volume methods for semiconductor device
• scientific article; zbMATH DE number 2142551 (Why is no real title available?)

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