Modification of upwind finite difference fractional step methods by the transient state of the semiconductor device

DOI10.1002/NUM.20272MaRDI QIDQ5451434zbMATH OpenOpenAlexFDO

Authors Yirang Yuan

Publication date 27 March 2008

Published in Numerical Methods for Partial Differential Equations (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1002/num.20272

zbMATH Keywords

optimal error estimatesfractional stepthree-dimensional heat conductionparallel upwind finite differencetransient state of the semiconductor device

Mathematics Subject Classification ID

Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

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Cited in

(10)

• Difference streamline diffusion method for three-dimensional semiconductor problem with heat-condution
• An upwind-block-centered finite difference method for a semiconductor device of heat conduction and its numerical analysis
• Characteristic finite difference fractional step methods for three-dimensional semiconductor device of heat conduction
• Upwind finite volume scheme for semiconductor device in three dimensions
• Modified upwind finite volume scheme for semiconductor device
• A block-centered upwind approximation of the semiconductor device problem on a dynamically changing mesh
• Finite difference fractional step methods for the transient behavior of a semiconductor device
• A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis
• Numerical method and analysis of computational fluid mechanics for photoelectric semiconducting detector
• Numerical method of mixed finite volume-modified upwind fractional step difference for three-dimensional semiconductor device transient behavior problems

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