Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate. II. Application to inxga1 - xas/InP system
From MaRDI portal
(Redirected from Publication:833941)
Recommendations
- Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate. I: Mathematical formulation
- Periodic cracking of films supported on compliant substrates
- On stability of epitaxially strained thin films in cubic crystal growth
- Boundary element analysis of cracked film-substrate media
- Channel cracking in inelastic film/substrate systems
Cites work
- Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate. I: Mathematical formulation
- Dependence of stress on elastic constants in an anisotropic bimaterial under plane deformation; and the interfacial crack
- Elastic study on singularities interacting with interfaces using alternating technique. I: Anisotropic trimaterial.
- Generalized Dundurs constants for anisotropic bimaterials
- Mixed Mode Cracking in Layered Materials
- Thin Film Materials
Cited in
(4)- Effect of elastic constants on crack channeling in a thin film bonded to an orthotropic substrate
- Mathematical model for simulation of indium segregation and mismatch stress in InGaAs/GaAs multiple QWs heterostructures
- Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate. I: Mathematical formulation
- Erratum to ``Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate: Part I. Mathematical formulation
This page was built for publication: Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate. II. Application to inxga1 - xas/InP system
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q833941)