Recent advances in models for thermal oxidation of silicon
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Publication:5956645
DOI10.1006/JCPH.2001.6884zbMath1106.74317OpenAlexW2067809449MaRDI QIDQ5956645
Vinay S. Rao, Krishna Garikipati
Publication date: 28 February 2002
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1006/jcph.2001.6884
Related Items (6)
Chemically induced swelling of hydrogels ⋮ A mixture-compatible theory of chemothermal deposition and expansion in n-constituent finitely deforming composite materials with initially circularly cylindrical microstructures ⋮ Advances in the numerical treatment of grain-boundary migration: coupling with mass transport and mechanics ⋮ A simulation system based on mixed-hybrid finite elements for thermal oxidation in semiconductor technology ⋮ A numerical strategy for investigating the kinetic response of stimulus-responsive hydrogels ⋮ Coupling diffusion-reaction-mechanics model for oxidation
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