An energy localization principle and its application to fast kinetic Monte Carlo simulation of heteroepitaxial growth
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Publication:835874
DOI10.1016/J.JMPS.2008.11.007zbMATH Open1170.74359OpenAlexW1964559549MaRDI QIDQ835874FDOQ835874
Publication date: 31 August 2009
Published in: Journal of the Mechanics and Physics of Solids (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jmps.2008.11.007
Cites Work
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- Modeling of phase separation in alloys with coherent elastic misfit
- Thin Film Materials
- On Saint Venant’s principle
- Variational principles in the linear theory of viscoelasticity
- Computation of strained epitaxial growth in three dimensions by kinetic Monte Carlo
- Exact Artificial Boundary Conditions for Continuum and Discrete Elasticity
- Fast kinetic Monte Carlo simulation of strained heteroepitaxy in three dimensions
- An application of multigrid methods for a discrete elastic model for epitaxial systems
- A Kinetic Monte Carlo method for the simulation of heteroepitaxial growth
- Stress concentration at slightly undulating surfaces
- A Multigrid-Fourier Method for the Computation of Elastic Fields with Application to Heteroepitaxy
Cited In (9)
- Kinetic Monte Carlo simulation of strained heteroepitaxial growth with intermixing
- Multiscale diffusion Monte Carlo simulation of epitaxial growth
- Fast Kinetic Monte Carlo Simulations Using Hash Table Based Caching with Applications to Nanowire Growth and Sintering
- Analysis of an energy localization approximation applied to three-dimensional kinetic Monte Carlo simulations of heteroepitaxial growth
- Off-lattice Kinetic Monte Carlo Simulations of Strained Heteroepitaxial Growth
- Lattice Gas Models and Kinetic Monte Carlo Simulations of Epitaxial Growth
- Massively parallel kinetic Monte Carlo simulations of charge carrier transport in organic semiconductors
- Coupling kinetic Monte-Carlo and continuum models with application to epitaxial growth
- Approximating Off-Lattice Kinetic Monte Carlo
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