Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices

DOI10.1016/j.jde.2006.01.022zbMath1107.35016OpenAlexW2007826653MaRDI QIDQ2496733

Ling Hsiao, Shu Wang

Publication date: 20 July 2006

Published in: Journal of Differential Equations (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jde.2006.01.022

zbMATH Keywords

one space dimensionDebye lengthelliptic-parabolic systementropy production estimatesmultiple scale asymptotic expansionquasineutral limit Debye length

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) Statistical mechanics of semiconductors (82D37) Motion of charged particles (78A35)

Related Items (13)

Quantum Semiconductor Models ⋮ Quasi-neutral limit and the initial layer problem of the drift-diffusion model ⋮ Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities ⋮ Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions ⋮ Quasi-neutral limit and the boundary layer problem of Planck-Nernst-Poisson-Navier-Stokes equations for electro-hydrodynamics ⋮ GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL ⋮ The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions ⋮ Vanishing cross-diffusion limit in a Keller-Segel system with additional cross-diffusion ⋮ Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile ⋮ Quasineutral limit of bipolar quantum hydrodynamic model for semiconductors ⋮ Quasi-neutral limit and the initial layer problem of the electro-diffusion model arising in electro-hydrodynamics ⋮ Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation ⋮ Quasineutral limit of the electro-diffusion model arising in electrohydrodynamics

Cites Work

• Unnamed Item
• Unnamed Item
• Unnamed Item
• Unnamed Item
• Unnamed Item
• Unnamed Item
• Unnamed Item
• On the basic equations for carrier transport in semiconductors
• On Maxwellian equilibria of insulated semiconductors
• Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
• On large time asymptotics for drift-diffusion-poisson systems
• The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
• FROM VLASOV-POISSON SYSTEM TO THE INCOMPRESSIBLE EULER SYSTEM
• QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
• Quasineutral Limit of Euler–Poisson System with and without Viscosity
• On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
• An Asymptotic Analysis of a Transient p-n-Junction Model
• Quasineutral limit of an euler-poisson system arising from plasma physics
• Convergence of Nonlinear Schrödinger–Poisson Systems to the Compressible Euler Equations
• Defect measures of the vlasov-poisson system in the quasineutral regime
• QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
• Oscillations in quasineutral plasmas
• convergence of the vlasov-poisson system to the incompressible euler equations
• A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
• An Initial Value Problem from Semiconductor Device Theory
• On singular limits of mean-field equations.

This page was built for publication: Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices