QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
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Publication:3043546
DOI10.1142/S0218202503002593zbMath1053.82035OpenAlexW2095298085WikidataQ62568254 ScholiaQ62568254MaRDI QIDQ3043546
Publication date: 6 August 2004
Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1142/s0218202503002593
Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) Reaction-diffusion equations (35K57) Statistical mechanics of semiconductors (82D37)
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Cites Work
- On the basic equations for carrier transport in semiconductors
- On large time asymptotics for drift-diffusion-poisson systems
- On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
- QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
- The initial time layer problem and the quasineutral limit in a nonlinear drift diffusion model for semiconductors
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