A Mixed Finite-Element Discretization of the Energy-Transport Model for Semiconductors

DOI10.1137/S1064827501396440zbMath1163.65332MaRDI QIDQ4442450

Stefan Holst, Ansgar Jüngel, Paola Pietra

Publication date: 20 January 2004

Published in: SIAM Journal on Scientific Computing (Search for Journal in Brave)

zbMATH Keywords

mixed finite elementssemiconductorsexponential fittingtwo-dimensional metal-semiconductor field-effect transistor

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of superconductors (82D55) Motion of charged particles (78A35)

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