Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors

DOI10.1006/JDEQ.2000.3825zbMath0986.35110OpenAlexW2068971618MaRDI QIDQ5931938

Ling Hsiao, Tong Yang

Publication date: 6 June 2002

Published in: Journal of Differential Equations (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1006/jdeq.2000.3825

zbMATH Keywords

drift-diffusion modelhydrodynamic semiconductor equationslarge-time asymptotics

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) PDEs in connection with optics and electromagnetic theory (35Q60) Statistical mechanics of semiconductors (82D37)

Related Items (26)

A review of hydrodynamical models for semiconductors: Asymptotic behavior ⋮ Global smooth solutions to the multidimensional hydrodynamic model for plasmas with insulating boundary conditions ⋮ Large time behavior of solutions to a bipolar hydrodynamic model with big data and vacuum ⋮ Stationary solutions for a multi-dimensional nonisentropic hydrodynamic model for semiconductors ⋮ Existence and asymptotic behavior of smooth solutions to bipolar hydrodynamic model ⋮ Vanishing electron mass limit in the bipolar Euler-Poisson system ⋮ The asymptotic behavior of globally smooth solutions of the multidimensional isentropic hydrodynamic model for semiconductors. ⋮ Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors. ⋮ Global solutions to compressible Navier-Stokes-Poisson and Euler-Poisson equations of plasma on exterior domains ⋮ Wave front tracing and asymptotic stability of planar travelling waves for a two-dimensional shallow river model ⋮ Relaxation-time limit of the multidimensional bipolar hydrodynamic model in Besov space ⋮ Stability of steady states of the compressible Euler-Poisson system in \(\mathbb R^3\) ⋮ Multi-dimensional bipolar hydrodynamic model of semiconductor with insulating boundary conditions and non-zero doping profile ⋮ Relaxation-time limit of the three-dimensional hydrodynamic model with boundary effects ⋮ Existence and large time behavior of entropy solutions to one-dimensional unipolar hydrodynamic model for semiconductor devices with variable coefficient damping ⋮ Relaxation limit and initial layer analysis of a bipolar hydrodynamic model for semiconductors ⋮ Global existence and asymptotic behavior for a multidimensional nonisentropic hydrodynamic semiconductor model with the heat source ⋮ Large time behavior of entropy solutions to one-dimensional unipolar hydrodynamic model for semiconductor devices ⋮ Large-time behavior of solutions to unipolar Euler-Poisson equations with time-dependent damping ⋮ Global smooth solutions to the multi-dimensional hydrodynamic model for two-carrier plasmas ⋮ Weak solutions to isothermal hydrodynamic model for semiconductor devices ⋮ Large time behavior of Euler-Poisson equations for isothermal fluids with spherical symmetry ⋮ The asymptotic behavior of global smooth solutions to the hydrodynamic model for semiconductors with spherical symmetry ⋮ Stability of semiconductor states with insulating and contact boundary conditions ⋮ Large time behavior of solutions to multi-dimensional bipolar hydrodynamic model of semiconductors with vacuum ⋮ Large-time behavior of the full compressible Euler-Poisson system without the temperature damping

Cites Work

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• Convergence of the Godunov scheme for a simplified one-dimensional hydrodynamic model for semiconductor devices
• The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations
• An energy-transport model for semiconductors derived from the Boltzmann equation.
• On a one-dimensional steady-state hydrodynamic model for semiconductors
• Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
• The bipolar hydrodynamic model for semiconductors and the drift-diffusion equations
• The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors
• Weak solutions to a hydrodynamic model for semiconductors: the Cauchy problem
• THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
• ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
• On a hierarchy of macroscopic models for semiconductors
• On a System of Nonlinear Boltzmann Equations of Semiconductor Physics

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