Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions
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Publication:615977
DOI10.1016/j.jde.2010.08.029zbMath1213.35055MaRDI QIDQ615977
Publication date: 7 January 2011
Published in: Journal of Differential Equations (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jde.2010.08.029
energy estimates; boundary layer; one space dimension; small Debye length; matched asymptotic analysis; ill-prepared boundary data; physical contact-insulating boundary conditions; well prepared boundary
35B40: Asymptotic behavior of solutions to PDEs
35B25: Singular perturbations in context of PDEs
35K57: Reaction-diffusion equations
82D37: Statistical mechanics of semiconductors
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Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile, Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities
Cites Work
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- On Maxwellian equilibria of insulated semiconductors
- Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
- Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
- QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
- QUASI-NEUTRAL LIMIT OF THE MULTIDIMENSIONAL DRIFT-DIFFUSION MODELS FOR SEMICONDUCTORS
- Quasineutral Limit of Euler–Poisson System with and without Viscosity
- A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
- On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
- An Asymptotic Analysis of One-Dimensional Models of Semiconductor Devices
- convergence of the vlasov-poisson system to the incompressible euler equations
- A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
- Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
- QUASINEUTRAL LIMIT OF THE MULTI-DIMENSIONAL DRIFT-DIFFUSION-POISSON MODELS FOR SEMICONDUCTORS WITH PN-JUNCTIONS
- On singular limits of mean-field equations.