Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
From MaRDI portal
Publication:638709
DOI10.1007/s00033-010-0063-6zbMath1237.82044MaRDI QIDQ638709
D. L. Tkachev, Alexander Blokhin
Publication date: 13 September 2011
Published in: ZAMP. Zeitschrift für angewandte Mathematik und Physik (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s00033-010-0063-6
fixed-point argument; hydrodynamical model of charge transport in semiconductors; non-Cauchy-Kovalevskaja-type system
82D37: Statistical mechanics of semiconductors
35A01: Existence problems for PDEs: global existence, local existence, non-existence
35D30: Weak solutions to PDEs
35G61: Initial-boundary value problems for systems of nonlinear higher-order PDEs
Related Items
Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle, Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients
Cites Work
- Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- Moment closure hierarchies for kinetic theories.
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Representation of the solution to a model problem in semiconductor physics
- Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
- Linear and quasilinear elliptic equations
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- Numerical Method for 2D Simulation of a Silicon MESFET with a Hydrodynamical Model Based on the Maximum Entropy Principle
- TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
- Elliptic Partial Differential Equations of Second Order
- On a hierarchy of macroscopic models for semiconductors
- Hydrodynamical modeling of charge carrier transport in semiconductors
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item