Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
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Publication:1604238
DOI10.1006/JMAA.2001.7813zbMath1016.82034OpenAlexW2011538070MaRDI QIDQ1604238
Publication date: 4 July 2002
Published in: Journal of Mathematical Analysis and Applications (Search for Journal in Brave)
Full work available at URL: https://semanticscholar.org/paper/b26aa281c2840ae8c747c6830d0c02a409405f37
PDEs in connection with optics and electromagnetic theory (35Q60) Statistical mechanics of semiconductors (82D37)
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Cites Work
- Unnamed Item
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- Compact sets in the space \(L^ p(0,T;B)\)
- The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
- On Existence, Uniqueness and Asymptotic Behavior of Solutions of the Basic Equations for Carrier Transport in Semiconductors
- An Asymptotic Analysis of a Transient p-n-Junction Model
- Quasineutral limit of an euler-poisson system arising from plasma physics
- QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
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