Mixed finite volume methods for semiconductor device simulation
Publication:4342160
DOI<link itemprop=identifier href="https://doi.org/10.1002/(SICI)1098-2426(199705)13:3<215::AID-NUM1>3.0.CO;2-Q" /><215::AID-NUM1>3.0.CO;2-Q 10.1002/(SICI)1098-2426(199705)13:3<215::AID-NUM1>3.0.CO;2-QzbMath0890.65132OpenAlexW2067906924MaRDI QIDQ4342160
Publication date: 6 July 1998
Full work available at URL: https://doi.org/10.1002/(sici)1098-2426(199705)13:3<215::aid-num1>3.0.co;2-q
finite elementsnumerical examplesnonlinear Poisson equationdrift-diffusion equationssemiconductor device simulationGummel iteration proceduremixed finite volume methods
PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)
Related Items (19)
Cites Work
- Some upwinding techniques for finite element approximations of convection-diffusion equations
- L\({}_{\infty}\) stability of finite element approximations to elliptic gradient equations
- Global approximate Newton methods
- Convergence of a second-order accurate Petrov-Galerkin scheme for convection-diffusion problems in semiconductors
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- Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models
- A new non-conforming Petrov-Galerkin finite-element method with triangular elements for a singularly perturbed advection-diffusion problem
- An analysis of the Scharfetter-Gummel box method for the stationary semiconductor device equations
- Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
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