An Initial Value Problem from Semiconductor Device Theory
From MaRDI portal
Cited in
(88)- A parabolic-elliptic chemo-repulsion system in 2D domains with nonlinear production
- Singular limit problem for the Keller-Segel system and drift-diffusion system in scaling critical spaces
- Global existence of solutions for the Poisson-Nernst-Planck system with steric effects
- 3D full hydrodynamic model for semiconductor optoelectronic devices: stability of thermal equilibrium states
- The Debye system: existence and large time behavior of solutions
- Global estimates and asymptotics for electro reaction diffusion systems in heterostructures
- On the existence of global smooth solutions to the parabolic-elliptic Keller-Segel system with irregular initial data
- Global well posedness for a 2D drift-diffusion-Maxwell system
- Finite time blow up and concentration phenomena for a solution to drift-diffusion equations in higher dimensions
- An optimal control problem related to a parabolic-elliptic chemo-repulsion system in 2D domains
- Galerkin Approximation of Weak Solutions of the Drift Diffusion Model for Semiconductors Coupled with Maxwell's Equations
- Error analysis of finite element method for Poisson-Nernst-Planck equations
- Global existence of large solutions for the generalized Poisson-Nernst-Planck equations
- Classical solvability in a 2-d cross-diffusion system arising from the ion transport networks
- A generalized Poisson-Nernst-Planck-Navier-Stokes model on the fluid with the crowded charged particles: derivation and its well-posedness
- Global existence and temporal decay of large solutions for the Poisson–Nernst–Planck equations in low regularity spaces
- Uniform-in-time boundedness in a class of local and nonlocal nonlinear attraction-repulsion chemotaxis models with logistics
- Refined criteria toward boundedness in an attraction–repulsion chemotaxis system with nonlinear productions
- Time-dependent solutions of a nonlinear system arising in semiconductor theory
- The well-posedness of bipolar semiconductor hydrodynamic model with recombination-generation rate on the bounded interval
- NUMERICAL SOLUTION OF AN INITIAL‐VALUE PROBLEM FOR A SEMICONDUCTOR DEVICE
- Improvement of conditions for global boundedness in a predator-prey system with pursuit-evasion interaction
- A linearized local conservative mixed finite element method for Poisson-Nernst-Planck equations
- Superconvergence analysis of finite element method for nonlinear semiconductor device problem
- Global existence and eventual smoothness in a 2-D parabolic-elliptic system arising from ion transport networks
- Uniqueness and regularity for the two-dimensional drift-diffusion model for semiconductors coupled with Maxwell's equations
- Well-posedness on a new hydrodynamic model of the fluid with the dilute charged particles
- Exponential decay of a finite volume scheme to the thermal equilibrium for drift-diffusion systems
- Superconvergence analysis of low order nonconforming finite element method for coupled nonlinear semiconductor device problem
- Partial regularity of suitable weak solutions of the Navier-Stokes-Planck-Nernst-Poisson equation
- Optimal decay rates of the solution for generalized Poisson-Nernst-Planck-Navier-Stokes equations in \(\mathbb{R}^3\)
- Dissipative gradient nonlinearities prevent -formations in local and nonlocal attraction-repulsion chemotaxis models
- Global dynamics and zero-diffusion limit of a parabolic-elliptic-parabolic system for ion transport networks
- Boundedness of solutions in a quasilinear chemo-repulsion system with nonlinear signal production
- Eventual smoothness and exponential stabilization of global weak solutions to some chemotaxis systems
- Boundedness and blow up in the higher-dimensional attraction-repulsion chemotaxis system with nonlinear diffusion
- Gevrey regularity of mild solutions to the parabolic-elliptic system of drift-diffusion type in critical Besov spaces
- Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile
- Critical structures and regularity for nonlinear evolutional partial differential equations
- Finite Element Approximation to Initial-Boundary Value Problems of the Semiconductor Device Equations with Magnetic Influence
- Global existence and decay estimates of solutions of a parabolic-elliptic-parabolic system for ion transport networks
- Global existence of solutions for the drift-diffusion system with large initial data in \(\dot{B}^{- 2}_{\infty, \infty} (\mathbb{R}^d)\)
- Numerical analysis of locally conservative weak Galerkin dual-mixed finite element method for the time-dependent Poisson-Nernst-Planck system
- A Nonlinear Drift ‐ Diffusion System with Electric Convection Arising in Electrophoretic and Semiconductor Modeling
- Combining effects ensuring boundedness in an attraction-repulsion chemotaxis model with production and consumption
- The drift-diffusion system in two-dimensional critical Hardy space
- Positivity preserving finite difference methods for Poisson-Nernst-Planck equations with steric interactions: application to slit-shaped nanopore conductance
- A problem related to microwaves propagating in the atmosphere
- Linearized conservative finite element methods for the Nernst-Planck-Poisson equations
- Existence of traveling wave solutions to parabolic-elliptic-elliptic chemotaxis systems with logistic source
- Mild solution for time fractional Debye-Hückel system in Besov-Morrey spaces
- Global existence of the non-isothermal Poisson-Nernst-Planck-Fourier system
- Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
- Asymptotic behavior of solutions of transport equations for semiconductor devices
- Existence of solutions for the Debye-Hückel system with low regularity initial data
- Asymptotic stability of stationary solutions to the drift-diffusion model with the fractional dissipation
- Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case
- The time decay rates of the classical solution to the Poisson-Nernst-Planck-Fourier equations in \(\mathbb{R}^3\)
- A singular limit in the drift diffusion model for semiconductors coupled with maxwell's equations
- Finite time blow up for a solution to system of the drift-diffusion equations in higher dimensions
- Time‐periodic flows of electrons and holes in semiconductor devices
- A structure preserving hybrid finite volume scheme for semiconductor models with magnetic field on general meshes
- Remarks on the local existence of solutions to the Debye system
- Stabilization in a higher-dimensional attraction-repulsion chemotaxis system if repulsion dominates over attraction
- On the Cauchy problem for the fractional drift-diffusion system in critical Besov spaces
- Critical mass phenomenon in a chemotaxis fluid system
- Large-time asymptotics for a matrix spin drift-diffusion model
- Threshold of global behavior of solutions to a degenerate drift-diffusion system in between two critical exponents
- Singular limit problem for the two-dimensional Keller-Segel system in scaling critical space
- Maximal regularity and a singular limit problem for the Patlak-Keller-Segel system in the scaling critical space involving \textit{BMO}
- On the basic equations for carrier transport in semiconductors
- Finite time blow up and non-uniform bound for solutions to a degenerate drift-diffusion equation with the mass critical exponent under non-weight condition
- On a repulsion Keller–Segel system with a logarithmic sensitivity
- An adaptive conservative finite volume method for Poisson-Nernst-Planck equations on a moving mesh
- Global weak solution and boundedness in a three-dimensional competing chemotaxis
- Relaxation limit and initial layer analysis of a bipolar hydrodynamic model for semiconductors
- Some remarks on well-posedness of the higher-dimensional chemorepulsion system
- Well-posedness for the drift-diffusion system in \(L^p\) arising from the semiconductor device simulation
- Existence and asymptotics of solutions for a parabolic-elliptic system with nonlinear no-flux boundary conditions
- Gevrey regularity and time decay of the fractional Debye-Hückel system in Fourier-Besov spaces
- Uniform-in-time bounds for approximate solutions of the drift-diffusion system
- Unboundedness for solutions to a degenerate drift-diffusion equation with the \(L^{1}\)-supercritical and the energy subcritical exponent
- Analysis of electronic models for solar cells including energy resolved defect densities
- Asymptotic behavior of solutions for the one-dimensional drift-diffusion model in the quarter plane
- Evolution systems in semiconductor device modeling: A cyclic uncoupled line analysis for the gummel map
- Properties of given and detected unbounded solutions to a class of chemotaxis models
- An HDG method for the time-dependent drift-diffusion model of semiconductor devices
- Time discretization of a nonlinear initial value problem
This page was built for publication: An Initial Value Problem from Semiconductor Device Theory
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q5669156)