Recent developments in hydrodynamical modeling of semiconductors
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A review of recent developments in hydrodynamical modelling of charge transport in semiconductors is given. The model based on the balance equations of electron and energy density, velocity and energy flux couple with Poisson equation for the electric potential. The system is hyperbolic in the physically relevant region of the field variables. For the entire collection see [Zbl 1024.00023].
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(31)- Hot electron transport in semiconductors
- Global existence for the system of the macroscopic balance equations of charge transport in semiconductors
- Semiconductor device simulation using a viscous hydrodynamic model.
- A hydrodynamic model for covalent semiconductors with applications to GaN and SiC
- 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
- Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
- Maximum entropy moment system of the semiconductor Boltzmann equation using Kane's dispersion relation
- Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients
- Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors
- A hydrodynamical model for holes in silicon semiconductors
- A new Shockley-Read-Hall hydrodynamical model for carriers and phonons
- Positivity-preserving discontinuous Galerkin schemes for linear Vlasov-Boltzmann transport equations
- Designing of computational algorithm for system of moment equations which describe charge transport in semiconductors
- Strong discontinuities for the 2-D MEP hydrodynamical model of charge transport in semiconductors
- Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
- Semiconductor device design using the \textsc{BiMADS} algorithm
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- Full hydrodynamic simulation of GaAs MESFETs
- A review of hydrodynamical models for semiconductors: Asymptotic behavior
- scientific article; zbMATH DE number 1439033 (Why is no real title available?)
- Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
- Hydrodynamical modeling of charge carrier transport in semiconductors
- Application of Approximate Maximum-Entropy Moment Closure to the Wigner Equation
- Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
- Electron-phonon hydrodynamical model for semiconductors
- Hydrodynamic model for charge carriers
- Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- Diffusive corrections to asymptotics of a strong-field quantum transport equation
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