Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver

DOI10.1108/03321640410510578zbMath1125.82324OpenAlexW2004954336MaRDI QIDQ3156132

Orazio Muscato, Armando Majorana, Cristina L. R. Milazzo

Publication date: 6 January 2005

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321640410510578

zbMATH Keywords

Monte Carlo simulationSemiconductor devicesSiliconElectronic engineering

Mathematics Subject Classification ID

Related Items (12)

Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model ⋮ Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model ⋮ A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle ⋮ Numerical scheme for the far-out-of-equilibrium time-dependent Boltzmann collision operator: 1D second-degree momentum discretisation and adaptive time stepping ⋮ Numerical solver for the time-dependent far-from-equilibrium Boltzmann equation ⋮ Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle ⋮ Numerical solver for the out-of-equilibrium time dependent Boltzmann collision operator: application to 2D materials ⋮ Heat generation in silicon nanometric semiconductor devices ⋮ Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle ⋮ A combined multicell‐WENO solver for the Boltzmann‐Poisson system of 1D semiconductor devices ⋮ 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods ⋮ Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire

Cites Work

• Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
• A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices

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