Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models

DOI10.1002/fld.1393zbMath1154.82034OpenAlexW2043198279MaRDI QIDQ3596552

Claire Chainais-Hillairet

Publication date: 28 January 2009

Published in: International Journal for Numerical Methods in Fluids (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/fld.1393

zbMATH Keywords

energy transportfinite volumedrift-diffusionsemiconductor devicediodetransistor

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Statistical mechanics of semiconductors (82D37) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Transport processes in time-dependent statistical mechanics (82C70) Mesh generation, refinement, and adaptive methods for the numerical solution of initial value and initial-boundary value problems involving PDEs (65M50)

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Cites Work

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• The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors
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• On a hierarchy of macroscopic models for semiconductors
• FINITE VOLUME APPROXIMATION FOR DEGENERATE DRIFT-DIFFUSION SYSTEM IN SEVERAL SPACE DIMENSIONS
• Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion
• A finite volume method for the Laplace equation on almost arbitrary two-dimensional grids

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