Quantum-corrected drift-diffusion models for transport in semiconductor devices

DOI10.1016/J.JCP.2004.10.029zbMath1060.82040OpenAlexW2079910741MaRDI QIDQ1775795

Andrea L. Lacaita, Riccardo Sacco, Emilio Gatti, Carlo de Falco

Publication date: 4 May 2005

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jcp.2004.10.029

zbMATH Keywords

Finite element methodSchrödinger-PoissonDensity-gradientFunctional iterationsNanoscale semiconductor devicesQuantum and drift-diffusion models

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Applications to the sciences (65Z05)

Related Items (22)

Approximate solutions to the quantum drift-diffusion model of semiconductors ⋮ Convergent finite element discretizations of the density gradient equation for quantum semiconductors ⋮ Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models ⋮ An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes ⋮ A posteriori error control in numerical simulations of semiconductor nanodevices ⋮ A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle ⋮ A Positivity-preserving Finite Element Method for Quantum Drift-diffusion Model ⋮ A finite element method with energy-adaptive grids for the coupled Schrödinger-Poisson-drift-diffusion model ⋮ Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle ⋮ Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle ⋮ Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle ⋮ An approach to the Gummel map by vector extrapolation methods ⋮ An accelerated monotone iterative method for the quantum-corrected energy transport model ⋮ A quantum energy transport model for semiconductor device simulation ⋮ Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices ⋮ A steady-state mathematical model for an EOS capacitor: the effect of the size exclusion ⋮ A uniform numerical method for semilinear reaction-diffusion problems with a boundary turning point ⋮ Quantum High-Field Corrections to a Drift-Collision Balance Model of Semiconductor Transport ⋮ Quantum-corrected drift-diffusion models: Solution fixed point map and finite element approximation ⋮ Solution map analysis of a multiscale drift-diffusion model for organic solar cells ⋮ A finite-volume scheme for the multidimensional quantum drift-diffusion model for semiconductors ⋮ Nonstationary monotone iterative methods for nonlinear partial differential equations

Cites Work

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